Upcoming Webinars -
Presenter: Brij N. Singh, John Deer Inc., USA
Date: Wednesday, September 18, 2019, 11:00am EDT Rescheduled from August 14, 2019
Abstract: This presentation will discuss public information related to John Deere project funded by the US Department of Energy - PowerAmerica Institute at North Carolina State University, Raleigh. Through PowerAmerica, John Deere has formed a collaboration with researchers from the US Department of Energy National Renewable Energy Laboratory to develop a 200 kW 1050 VDC silicon carbide (SiC) dual-inverter. The SiC inverter converts vehicle engine power into electrical power needed for the permanent-magnet-motor based power-train used in heavy-duty construction and mining vehicles. The presentation will cover the development and test verification of various technologies deployed in the successful realization of a power-dense (greater than 40 kW/Liter) high-temperature (suitable for 115°C coolant) high-efficiency (greater than 98% over entire range of coolant) SiC dual-inverter. Test results from various generations of the SiC inverter will be presented. In April 2017, the Fargo, North Dakota-based John Deere Electronic Solutions (JDES) successfully demonstrated the SiC inverter in a John Deere 644K hybrid front loader vehicle, using the engine radiator fluid to cool the SiC power electronics. The SiC inverter technology demonstration took place at John Deere Dubuque Works (JDDW) in Dubuque, Iowa. Since then this SiC inverter has been operating on vehicles resulting over 2,000 hours experience from real-world applications of SiC power electronics technology. The DOE-PowerAmerica funding has greatly helped John Deere to accelerate the development of SiC inverter technology including the realization of key commercialization objectives.
YouTube link related to JD 644K Hybrid front loader vehicle is; https://www.youtube.com/watch?v=j1g0NwhO4Fg
Presenter: Dr. Jin Wang, The Ohio State University, USA
Date: Tuesday, September 3, 2019, 11:00am EDT
Sponsored by the IEEE Power Electronics Society
Abstract: The talk will focus on high power applications of Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It will start with a brief introduction of examples of state-of-the-art high power GaN and SiC converters. Then, common challenges that are faced by both GaN and SiC devices including gate drive designs, high dv/dt caused reflective waves, electromagnetic interference, partial discharge, etc. will be discussed. Specific challenges for the implementations of SiC in medium and high voltage applications will also be discussed.
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